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WoS Makaleler

Web of Science indeksli akademik yayınları keşfedin · Atıf analizi · Yazar metrikleri

17.386
Toplam Belge
222.861
Toplam Atıf
12,8
Ort. Atıf
2.903
Q1 Yayın
13.331
Atıflı Belge
1.197
Araştırmacı
8 sonuç
Web of Science veritabanı
WoS 🏆 JCR Q2 · JIF 2,6 2026 Article 1. Yazar
Capacitance-conductance characteristics of PMI-based MIS Schottky diodes under high-dose gamma irradiation and ambient ageing
PHYSICA SCRIPTA · Cilt 101 · ISSN 0031-8949
WoS YÖKSİS Eşleşti 2020 Article Son Yazar
The rate of Cu doped TiO<sub>2</sub> interlayer effects on the electrical characteristics of Al/Cu:TiO<sub>2</sub>/<i>n</i>-Si (MOS) capacitors depend on frequency and voltage
MICROELECTRONICS RELIABILITY · Cilt 106 · ISSN 0026-2714
WoS YÖKSİS Eşleşti 2016 Meeting 1. Yazar
Temperature dependence of current-voltage characteristics of Al/rubrene/n-GaAs (100) Schottky barrier diodes
MATERIALS TODAY-PROCEEDINGS · Cilt 3, s.&nbsp;1271-1276 · ISSN 2214-7853
Prof. Dr. ÖMER FARUK YÜKSEL · 4 yazar · +1 kurum yazarı
WoS YÖKSİS Eşleşti 2016 Meeting 1. Yazar
Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes
MATERIALS TODAY-PROCEEDINGS · Cilt 3, s.&nbsp;1255-1261 · ISSN 2214-7853
Prof. Dr. MURAT YILDIRIM · 5 yazar · +1 kurum yazarı
WoS YÖKSİS Eşleşti 2015 Article 3. Yazar
<SUP>60</SUP>Co gamma irradiation effects on the the capacitance and conductance characteristics of Au/PMI/n-Si Schottky diodes
INDIAN JOURNAL OF PHYSICS · Cilt 89, s.&nbsp;803-810 · ISSN 0973-1458
WoS 🏆 JCR Q1 · JIF 5,2 YÖKSİS Eşleşti 2013 Article 2. Yazar
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING · Cilt 16, s.&nbsp;786-791 · ISSN 1369-8001
WoS 🏆 JCR Q2 · JIF 4,3 YÖKSİS Eşleşti 2008 Article 1. Yazar
High frequency characteristics of tin oxide thin films on Si
VACUUM · Cilt 82, s.&nbsp;1183-1186 · ISSN 0042-207X
WoS 🏆 JCR Q2 · JIF 3,2 YÖKSİS Eşleşti 2008 Article 1. Yazar
Investigation of diode parameters using <i>I-V</i> and <i>C-V</i> characteristics of In/SiO<sub>2</sub>/p-Si (MIS) Schottky diodes
PHYSICA B-CONDENSED MATTER · Cilt 403, s.&nbsp;2690-2697 · ISSN 0921-4526