Scopus
YÖKSİS DOI Eşleşti
SJR Q2
Temperature dependence of current-voltage characteristics of Al/p-Si (1 0 0) Schottky barrier diodes
Physica B Condensed Matter · Temmuz 2009
Özet
The current-voltage (I-V) characteristics on Al/p-Si (1 0 0) Schottky barrier diodes in the temperature range 100-300 K were carried out. We have tried to determine some intrinsic and contact properties such as barrier heights, ideality factor, series resistance, and carrier concentrations. The apparent barrier height and the ideality factor calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluation of forward I-V data reveals a decrease in the zero-bias barrier height (ΦB0), but an increase in the ideality factor (n) with decrease in temperature. From the reverse-bias I-V graphs, it is found that the experimental carrier density (NA) values have increased with increasing temperature. © 2009 Elsevier B.V. All rights reserved.
YÖKSİS Kayıtları
Temperature dependence of current voltage characteristics of Al p Si 100 Schottky barrier diodes
Physica B: Condensed Matter · 2009 SCI-Expanded
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YÖKSİS Kayıtları — ISSN Eşleşmesi
Bu dergide (ISSN eşleşmesi) kurumun 20 kaydı bulundu.
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Bu dergide (ISSN eşleşmesi) kurumun 20 kaydı bulundu.
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Makale Bilgileri
Toplam Atıf
52 atıf
· Scopus
ISSN09214526
Yayın TarihiTemmuz 2009
Cilt / Sayfa404 · 1993-1997
Scopus ID2-s2.0-67349156057
Kurumlar
Selçuk Üniversitesi
Selçuklu Turkey
Havuzumuzdaki Atıflar 0
Bu makaleye, sistemimizdeki Scopus veritabanında bulunan 0 makale atıf yapmıştır. Scopus genel atıf sayısı: 52.
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Scimago Dergi (ISSN Eşleşmesi)
Physica B: Condensed Matter
Q2
SJR Skoru0,480
H-Index143
YayıncıElsevier B.V.
ÜlkeNetherlands
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Metrikler
52
Atıf