Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes

The Fluorene-Carbazole (FC) was synthesized by Suziki method in this study. The organic semiconductor is prepared on p- type Si substrate by spin coating method. We have produced Au/FC/p-Si Schottky diodes. We have investigated the current-voltage characteristics over temperature range between 200 and 350 K. The measured current-voltage (I-V) characteristics of device have demonstrated a good rectification behaviour at all temperatures. The parameters such as the ideality factor (n), barrier height (ΦB) and series resistance (RS) were determined from the experimental data using standard current-voltage analysis method. At T=200 K, we have found the values of the n and ΦB as 2.78 and 0.491 eV respectively. On the other hand, their values were found as n=1.86 and ΦB = 0.779 eV at T=350 K. The values of RS are calculated using Cheung and Cheung functions between 200 K and 350 K. The H(I)-I plot of Cheung and Cheung method shows RS of 1823.23 Ω for 200 K and value of 952.6 Ω for 350 K.