Investigation and calculation of electrical performance of lead-free AgBiI4 perovskite based Schottky photodiode using machine learning

Lead-free nanoparticles gain importance due to their environmentally clean and reliable production processes in optoelectronics. In this study, we synthesized AgBiI4 lead-free perovskite material and used it as an interlayer to obtain a Schottky photodiode structure. Optical, morphological, and structural properties were investigated via UV–Vis, SEM, SEM–EDS, AFM, and XRD. The crystal structure was confirmed by X-ray diffraction (XRD) results. The results obtained from the UV–Visible spectrophotometer clearly showed the peaks of the crystal structure at 566.94 nm. The band gap calculated from UV–Vis results was 1.91 eV for AgBiI4 perovskite crystals. We used AgBiI4 structures as interlayers between n-type Si and Al to obtain a photodiode heterostructure and investigate their structural sensing performance using current–voltage and current-transient measurements. Ideality factor and barrier height values were calculated using machine learning. Lead-free perovskite structures recorded excellent photodetector properties, reaching 2.636 A/W responsivity and 1.30 × 1011 Jones detectivity.