Optimization of Back Surface Field Layers for High-Performance CZTSe Ultrathin-Film Solar Cells Using SCAPS-1D Simulations

This study explores the performance of an ultrathin Cu<inf>2</inf>ZnSnSe<inf>4</inf> (CZTSe) absorber-based solar cell using numerical simulations carried out with SCAPS-1D software (version 3.8). Ultrathin absorber layers, generally thinner than 500 nm, are attractive because they require less material, reduce manufacturing costs, and can improve carrier collection due to the shorter distance that charge carriers must travel. However, when the absorber layer becomes very thin, it cannot absorb enough photons, which may limit the overall device performance. To overcome this challenge, the use of back surface field (BSF) layers is examined as a practical approach to improve photovoltaic efficiency. In this work, a solar cell structure composed of Carbon/BSF/CZTSe/CdS/i-ZnO/ITO was designed and simulated, with the thickness of the CZTSe absorber layer kept constant at 85 nm. Three different p⁺-type BSF materials, V<inf>2</inf>O<inf>5</inf>, Sb<inf>2</inf>S<inf>3</inf>, and CuSCN, were studied to understand how they influence device behavior. Important parameters such as electron affinity, interface defect density, acceptor defect density in the absorber layer, recombination processes, back contact properties, and operating temperature were systematically investigated. The addition of BSF layers forms a strong electric field at the p⁺–p interface, which helps push minority carriers toward the depletion region and reduces recombination losses at the back contact. The simulation results show that selecting a suitable BSF material can significantly enhance charge carrier collection and improve the efficiency of ultrathin CZTSe solar cells, offering useful guidance for designing more efficient thin-film photovoltaic devices.