The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (Io), ideality factors (n), barrier heights (Фbo), rectification ratio (RR) and series resistances (RS) were obtained from I-V and C-V measurements using different calculation methods. At low voltages (V ≤ 0.3 V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V > 0.3 V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) was obtained from the I-Vdata by taking into account the bias dependence of the effective barrier height (Φb) for the Re/n-type Si Schottky barrier diodes.