Photoionization cross-section and oscillator strength of hydrogenic impurities in ZnS/SiO2 quantum dots

In this study, the photoionization cross-section and oscillator strength for the intersubband electronic transitions associated with an on-center impurity in the ZnS/SiO2 spherical quantum dot have been calculated. The effects of dot radius, the normalized photon energy and the potential barrier height on the cross-section have been investigated. In the calculations, both the infinite and finite confinement cases have been considered. © 2009 World Scientific Publishing Company.