Optoelectrical characterization of PANI:Coronene/ p-Si photodiode

In this study, Al/PANI:Coronene/p-Si structures were produced using the PANI:Coronene ratios of 1:0.5, 1:1, and 1:2 w/w, and photodiode properties of structures were declared. From current–voltage measurements, it was seen that the structures exhibited good rectifying behavior. With increasing light intensity, splitting and increasing current values were observed as a result of photons producing charge carriers. Thus, it was seen that the device has a photoconductive structure. In double logarithmic photocurrent measurements, the highest photoconductivity behavior was obtained with a photocurrent between 4.46 × 10− 6 and 7.44 × 10− 6 A for the PANI:Coronene ratio of 1:2 (w/w). The m values of around 0.56–0.85 obtained from photocurrent measurements were between 0 and 1, indicating continuous localized state distributions within the structure. The responsivity (R), sensitivity (K), and detectivity (D) tests were carried out on fabricated diodes depending on light power. A good current value of 1.77 × 10− 3 A was obtained from the light-dependent transient photocurrent recordings of diodes. Devices were found to be quite sensitive up to 1.86 at 20 mW/cm2. It was also observed that they had detection capabilities at the level of 1010 Jones, depending on light power. From the results obtained, it was seen that the devices exhibited photodiode properties, and especially PANI:Coronene ratio of 1:2 (w/w) device could be a candidate in the field of photo-detection.