Photodiode behaviors of the AgSbS2nanocrystals in a Schottky structure

Cubic phase AgSbS2 nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al and p-Si to fabricate Al/AgSbS2/p-Si photodiode by the thermal evaporation method. AgSbS2 NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS2. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS2/p-Si photodiode was characterized by I-V measurements depending on the light power intensity and by C-V measurement for various frequencies. I-V characteristics revealed that the Al/AgSbS2/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted from I-V measurements, and they were discussed in detail. The C-V characteristics highlighted that the Al/AgSbS2/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS2/p-Si photodiode can be thought for optoelectronic applications.