Thermal sensing capability of metal/composite-semiconductor framework device with the low barrier double Gaussian over wide temperature range

In this work, wide temperature range junction sensor was fabricated and comprehensively analyzed by grown of Graphene oxide (GO)-Fe3O4 blend on a p-type Si substrate via spin coating system. Cr was coated on GO-Fe3O4 with a DC magnetron sputtering. The temperature-dependent current–voltage (I–V) measurements of GO:Fe3O4/p-Si rectifying device were carried out in the temperature range of 100–400 K. The temperature sensitivity of the GO:Fe3O4/p-Si rectifying device was calculated for different forward current values and it was seen that the temperature sensitivity ranged from −1.18 mV/K (0.25 mA) to −1.08 mV/K (1.00 mA). Temperature-dependent I-V characteristics were explained by the thermionic emission (TE) theory by considering the presence of double Gaussian distribution of the barrier heights. It was observed that the barrier height and the ideality factor changed with temperature in accordance with the inhomogeneous barrier behavior. Ideality factor, series resistance and barrier height for the junction were calculated and analyzed. While the barrier height values varied between 0.20 eV (100 K) and 0.66 eV (400 K), the ideality factors varied between 5.81 (100 K) and 3.11 (400 K). In log(I)-T scale, the current varied approximately linearly with temperature at each temperature. Wide temperature range electrical measurements of GO:Fe3O4/p-Si rectifying device have showed that the device can be a temperature sensor due to its linear temperature dependent characteristics between 100 K and 400 K.