n-InP based and rubrene interface Schottky diode: Investigation of temperature dependent electrical properties and barrier inhomogeneity

In this study, the electrical properties of Ag/n-InP Schottky diode with a rubrene organic interface were systematically investigated over temperature range from 100 to 325 K. The forward current–voltage characteristics of diode were analyzed based on standard thermionic emission theory. The Ag/Rubrene/n-InP diode exhibited excellent rectifying behavior at all temperatures. Analysis of the diode parameters revealed that the barrier height (ΦB) increased, whereas the ideality factor (n) decreased with increasing temperature. The observed decrease in barrier height at low temperature values was interpreted using the inhomogeneous barrier model with a double Gaussian distribution. Also, the Richardson constant (A∗) was calculated as 9.460 A/cm2K2 from the modified Richardson plot, which is in excellent agreement with theoretical value determined for n-type InP (A∗= 9.4 A/cm2K2). These results indicate that the inhomogeneities in the Ag/Rubrene/n-InP Schottky barrier diode can be effectively characterized by a Gaussian distribution model. Overall, the findings demonstrate that the Ag/Rubrene/n-InP diode exhibits stable rectification performance over a wide temperature range and represents a promising candidate for potential electronic/optoelectronic device applications.