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SCI-Expanded JCR Q2 Özgün Makale Scopus
Synthesis, structural and electrical analysis of La and Nd-doped KCa(BO3)2 interlayers in Al/n-Si photodiode structures
Journal of Materials Science: Materials in Electronics 2025 Cilt 36
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In this study, the structural, optical, and electrical properties of La3⁺ and Nd3⁺-doped calcium orthoborate interlayers in Al/KCaRE(BO3)2/n-Si (RE = La, Nd) photodiode configurations were systematically investigated. The rare-earth-doped KCa(BO3)2 compounds were successfully synthesized, and coated via the spin-coating method, followed by detailed structural and compositional analysis using Fourier-transform infrared spectroscopy (FT-IR), powder X-ray diffraction (P-XRD), inductively coupled plasma mass spectrometry (ICP-MS), and scanning electron microscopy with energy-dispersive spectroscopy (SEM–EDS). FT-IR confirmed the characteristic B–O vibrational modes within the [BO₃]⁻ units, while P-XRD revealed well-defined crystalline phases. ICP-MS analysis verified the elemental stoichiometry in agreement with theoretical values, and SEM–EDS illustrated homogeneous surface morphology. The electrical and photoresponse characteristics of the fabricated heterojunctions were evaluated under variable illumination intensities through current–voltage (I–V) and current–time (I–t) measurements. Key device metrics—including photosensitivity (K), responsivity (R), and specific detectivity (D*)—were extracted to assess photodetector efficiency. Notably, the Al/KCaLa(BO3)2/Si configuration exhibited deviced performance, with higher photocurrent generation, enhanced responsivity, and improved detectivity compared to its Nd-doped counterpart. These findings not only demonstrate the efficacy of rare-earth-doped orthoborate interlayers in silicon photodiodes but also establish a promising platform for the advancement of high-sensitivity optoelectronic devices.
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Belge Türü
Kaynak: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

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Scimago Dergi Bilgisi Otomatik ISSN Eşleştirmesi 2025 yılı verileri
Journal of Materials Science: Materials in Electronics
Q2
SJR Quartile
0,493
SJR Skoru
117
H-Index
Kategoriler: Atomic and Molecular Physics, and Optics (Q2) · Condensed Matter Physics (Q2) · Electrical and Electronic Engineering (Q2) · Electronic, Optical and Magnetic Materials (Q2) · Bioengineering (Q3) · Biomaterials (Q3) · Biomedical Engineering (Q3) · Biophysics (Q3)
Alanlar: Biochemistry, Genetics and Molecular Biology · Chemical Engineering · Engineering · Materials Science · Physics and Astronomy
Ülke: United States · Springer New York
Bu bilgiler makale yılına göre Scimago veritabanından ISSN eşleştirmesiyle otomatik getirilmektedir. Dergi sıralama verileri Scimago'nun ilgili yılı baz alınmaktadır.

Anahtar Kelimeler

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Makale Bilgileri

Dergi Journal of Materials Science: Materials in Electronics
ISSN 0957-4522
Yıl 2025 / 8. ay
Cilt / Sayı 36
Makale Türü Özgün Makale
Hakemlik Hakemli
Endeks SCI-Expanded
JCR Quartile Q2
Teşvik Puanı 2,40 · YÖKSİS Akademik Teşvik
Yayın Dili İngilizce
Kapsam Uluslararası
Toplam Yazar 6 kişi
Erişim Türü Basılı+Elektronik
Alan Fen Bilimleri ve Matematik Temel Alanı Fizik Yoğun Madde Fiziği Yarı İletkenler Organik Elektronik

YÖKSİS Yazar Kaydı

Yazar Adı KARACA ABDULLAH,YAVUZ MAHMUT,HUSSAINI ALİ AKBAR,KÖSE DURSUN ALİ,YILDIRIM MURAT,YILDIZ DİLBER ESRA
YÖKSİS ID 8850964

Metrikler

Scopus Atıf 1
Havuz Atıfları 0
JCR Quartile Q2
Teşvik Puanı 2,40
Yazar Sayısı 6