Scopus Eşleşmesi Bulundu
2
Atıf
53
Cilt
2382-2397
Sayfa
🔓
Açık Erişim
Özet
In this investigation, we achieved successful deposition of nanostructured cupric oxide (CuO) thin films onto glass substrates through implementation of successive ionic layer adsorption and reaction (SILAR), all carried out at room temperature. This approach has proven to be highly efficient and yielded favorable results in terms of film quality and uniformity. A comprehensive investigation was conducted to analyze the effect of gold (Au) on the structural, morphological, optical, and electrical properties of nanocrystalline CuO thin films. The structural analysis confirmed that the films were polycrystalline, exhibiting a monoclinic crystal structure with preferential orientations along the (1¯11) and (111) planes. The estimated crystallite sizes ranged from 20.37 to 30.77 nm, indicating the nanoscale nature of the films. Scanning electron microscopy/energy-dispersive x-ray analysis (SEM/EDX) was executed to reveal the Au dopant on the surface of CuO thin films. Surface analysis revealed the presence of uniformly dispersed CuO nanostructures across the film surfaces. Through optical investigations, it was observed that the bandgap energy of the CuO thin films decreased from 1.52 to 1.45 eV with increasing Au concentration. Furthermore, the average transmittance of the films exhibited a decrease from 4.9% to 1.3% as the Au concentration increased. The electrical properties of the Al/Au:CuO/n-Si heterojunction were studied using current–voltage (I–V) measurements for various light power densities. The Al/Au:CuO/n-Si heterojunction exhibited good photodiode behavior, with 3.44 A/W responsivity and 1.58 × 1010 Jones specific detectivity for the 2% Au-doped CuO interfacial layer.
Web of Science Eşleşmesi Bulundu
2
WoS Atıf
53
Cilt
Article
Belge Türü
Kaynak: JOURNAL OF ELECTRONIC MATERIALS
· s. 2382-2397
Anahtar Kelimeler (WoS)
Havuzumuzdaki Atıflar 0
Bu makaleye, sistemimizdeki Scopus veritabanında bulunan 0 makale atıf yapmıştır. Scopus genel atıf sayısı: 2.
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Scimago Dergi Bilgisi
Otomatik ISSN Eşleştirmesi
2024 yılı verileri
Journal of Electronic Materials
Q2
SJR Quartile
0,475
SJR Skoru
117
H-Index
Kategoriler: Condensed Matter Physics (Q2) · Electrical and Electronic Engineering (Q2) · Materials Chemistry (Q2) · Electronic, Optical and Magnetic Materials (Q3)
Alanlar: Engineering · Materials Science · Physics and Astronomy
Ülke: United States
· Springer New York
Bu bilgiler makale yılına göre Scimago veritabanından ISSN eşleştirmesiyle otomatik getirilmektedir.
Dergi sıralama verileri Scimago'nun ilgili yılı baz alınmaktadır.
Anahtar Kelimeler
WoS |
Bir kelimeye tıklayıp ilgili kaynaktaki yayınları görün.
Makale Bilgileri
Dergi
Journal of Electronic Materials
ISSN
0361-5235
Yıl
2024
/ 2. ay
Cilt / Sayı
53
Sayfalar
2382 – 2397
Makale Türü
Özgün Makale
Hakemlik
Hakemli
Endeks
SCI-Expanded
JCR Quartile
Q3
Teşvik Puanı
1,50
· YÖKSİS Akademik Teşvik
Yayın Dili
İngilizce
Kapsam
Uluslararası
Toplam Yazar
6 kişi
Erişim Türü
Basılı+Elektronik
Alan
Fen Bilimleri ve Matematik Temel Alanı
Fizik
Malzeme Fiziği
Nanoteknoloji
Optoelektronik
YÖKSİS Yazar Kaydı
Yazar Adı
ÇAVUŞOĞLU HALİT,Hussaini Ali Akbar,ŞAKALAK HÜSEYİN,KOÇYİĞİT ADEM,DURMAZ FATİH,YILDIRIM MURAT
YÖKSİS ID
8210501